 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
TCDT1110 Datasheet(PDF) 4 Page - Vishay Siliconix |
|
||||||||||||||||||||||||||||||
TCDT1110 Datasheet(HTML) 4 Page - Vishay Siliconix |
|
|
4 / 8 page 
TCDT1110(G) Vishay Telefunken Rev. A3, 11–Jan–99 219 Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Test Conditions Symbol Value Unit Forward current Isi 130 mA Output (Detector) Parameters Test Conditions Symbol Value Unit Power dissipation Tamb ≤ 25°C Psi 265 mW Coupler Parameters Test Conditions Symbol Value Unit Rated impulse voltage VIOTM 6 kV Safety temperature Tsi 150 °C Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Symbol Min. Typ. Max. Unit Partial discharge test voltage – Routine test 100%, ttest = 1 s Vpd 1.6 kV Partial discharge test voltage – tTr = 60 s, ttest = 10 s, VIOTM 6 kV gg Lot test (sample test) Tr test (see figure 2) Vpd 1.3 kV Insulation resistance VIO = 500 V RIO 1012 W VIO = 500 V, Tamb = 100°C RIO 1011 W VIO = 500 V, Tamb = 200°C (construction test only) RIO 109 W 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 200 Tamb ( °C ) 95 10934 Psi (mW) Isi (mA) Figure 1. Derating diagram V IOTM V Pd V IOWM V IORM V t 4 t 3 t test t stres t 2 t 1 t 0 13930 t Tr = 60 s t 1 , t 2 = 1 to 10 s t 3 , t 4 = 1 s t test = 10 s t stres = 12 s Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
