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TCDT1110 Datasheet(PDF) 3 Page - Vishay Siliconix |
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TCDT1110 Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 8 page 
TCDT1110(G) Vishay Telefunken Rev. A3, 11–Jan–99 218 Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage IF = 50 mA VF 1.2 1.5 V Junction capacitance VR = 0, f = 1 MHz Cj 50 pF Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage IE = 100 mA VECO 7 V Collector cut-off current VCE = 30 V, IF = 0 ICEO 150 nA Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter saturation voltage IF = 10 mA, IC = 0.5 mA VCEsat 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 1 W fc 110 kHz Coupling capacitance f = 1 MHz Ck 0.3 pF Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit IC/IF VCE = 20 V, IF = 10 mA TCDT1110(G) CTR 1 |
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