S974TRW datasheet(2/6 Pages) VISHAY

Part #	S974TRW

Description	MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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2 / 6 page

S974T/S974TR/S974TRW

Vishay Telefunken

www.vishay.de

• FaxBack +1-408-970-5600

Rev. 3, 20-Jan-99

2 (6)

Document Number 85063

Absolute Maximum Ratings

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Drain - source voltage

VDS

12

V

Drain current

ID

30

mA

Gate 1/Gate 2 - source peak current

±IG1/G2SM

10

mA

Gate 1/Gate 2 - source voltage

±VG1/G2SM

6

V

Total power dissipation

Tamb ≤ 60 °C

Ptot

200

mW

Channel temperature

TCh

150

°C

Storage temperature range

Tstg

–55 to +150

°C

Maximum Thermal Resistance

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Channel ambient

on glass fibre printed board (25 x 20 x 1.5) mm3

plated with 35

mm Cu

RthChA

450

K/W

Electrical DC Characteristics

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Symbol

Min

Typ

Max Unit

Drain - source

breakdown voltage

±IG1S = 10 mA, VG2S = VG1S = 0

±V(BR)DSS

15

V

Gate 1 - source

breakdown voltage

±IG1S = 10 mA, VG2S = VDS = 0

±V(BR)G1SS

7

10

V

Gate 2 - source

breakdown voltage

±IG2S = 10 mA, VG1S = VDS = 0

±V(BR)G2SS

7

10

V

Gate 1 - source

leakage current

+VG1S = 5 V, VG2S = VDS = 0

+IG1SS

20

nA

Gate 2 - source

leakage current

±VG2S = 5 V, VG1S = VDS = 0

±IG2SS

20

nA

Drain - source

operating current

VDS = VRG1 = 9 V, VG2S = 4 V, RG1 = 390 kW

IDSO

8

12

16

mA

Gate 1 - source

cut-off voltage

VDS = VRG1 = 9 V, VG2S = 4 V, ID = 100 mA

VG1S(OFF)

0.4

1.2

V

Gate 2 - source

cut-off voltage

VDS = VRG1 = 9 V, RG1 = 390 kW,

ID = 100 mA

VG2S(OFF)

1.0

V

Remark on improving intermodulation behavior:

By setting RG1 = 300 kW instead of 390 kW, typical value of IDSO will raise up to about 15 mA and improved inter-

modulation behavior will be performed.

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