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S952T Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. S952T
Description  MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

S952T Datasheet(HTML) 2 Page - Vishay Siliconix

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S952T/S952TR/S952TRW
Vishay Telefunken
www.vishay.de
• FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
2 (6)
Document Number 85062
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Drain - source voltage
VDS
12
V
Drain current
ID
30
mA
Gate 1/Gate 2 - source peak current
±IG1/G2SM
10
mA
Gate 1/Gate 2 - source voltage
±VG1/G2SM
6
V
Total power dissipation
Tamb ≤ 60 °C
Ptot
200
mW
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
–55 to +150
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35
mm Cu
RthChA
450
K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Drain - source
breakdown voltage
±IG1S = 10 mA, VG2S = VG1S = 0
±V(BR)DSS
15
V
Gate 1 - source
breakdown voltage
±IG1S = 10 mA, VG2S = VDS = 0
±V(BR)G1SS
7
10
V
Gate 2 - source
breakdown voltage
±IG2S = 10 mA, VG1S = VDS = 0
±V(BR)G2SS
7
10
V
Gate 1 - source
leakage current
+VG1S = 5 V, VG2S = VDS = 0
+IG1SS
20
nA
Gate 2 - source
leakage current
±VG2S = 5 V, VG1S = VDS = 0
±IG2SS
20
nA
Drain - source
operating current
VDS = VRG1 = 9 V, VG2S = 4 V, RG1 = 390 kW
IDSO
7
10
14
mA
Gate 1 - source
cut-off voltage
VDS = VRG1 = 9 V, VG2S = 4 V, ID = 100 mA
VG1S(OFF)
0.4
1.2
V
Gate 2 - source
cut-off voltage
VDS = VRG1 = 9 V, RG1 = 390 kW, ID = 100 mA
VG2S(OFF)
1.0
V
Remark on improving intermodulation behavior:
By setting RG1 = 300 kW instead of 390 kW, typical value of IDSO will raise up to about 15 mA and improved inter-
modulation behavior will be performed.


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