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S593T Datasheet(PDF) 2 Page - Vishay Siliconix |
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S593T Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page S593T/S593TR/S593TRW Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-99 2 (9) Document Number 85047 Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Drain - source voltage VDS 8 V Drain current ID 30 mA Gate 1/Gate 2 - source peak current ±IG1/G2SM 10 mA Gate 1/Gate 2 - source voltage ±VG1/G2SM 6 V Total power dissipation Tamb ≤ 78 °C Ptot 200 mW Channel temperature TCh 150 °C Storage temperature range Tstg –55 to +150 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 mm Cu RthChA 450 K/W Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Gate 1 - source breakdown voltage ±IG1S = 10 mA, VG2S = VDS = 0 ±V(BR)G1SS 7 10 V Gate 2 - source breakdown voltage ±IG2S = 10 mA, VG1S = VDS = 0 ±V(BR)G2SS 7 10 V Gate 1 - source +VG1S = 5 V, VG2S = VDS = 0 +IG1SS 50 mA leakage current –VG1S = 5 V, VG2S = VDS = 0 –IG1SS 100 mA Gate 2 - source leakage current ±VG2S = 5 V, VG1S = VDS = 0 ±IG2SS 20 nA Drain current VDS = 5 V, VG1S = 0, VG2S = 4 V IDSS 50 500 mA Self-biased operating current VDS = 5 V, VG1S = nc, VG2S = 4 V IDSP 9 13 18 mA Gate 2 - source cut-off voltage VDS = 5 V, VG1S = nc, ID = 20 mA VG2S(OFF) 1.0 V Caution for Gate 1 switch-off mode: No external DC-voltage on Gate 1 in active mode! Switch-off at Gate 1 with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL). Insert 10 k W collector resistor. |
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