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S186P Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. S186P
Description  Silicon PIN Photodiode
Download  6 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

S186P Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 81536
Rev. 1.3, 08-Mar-05
S186P
Vishay Semiconductors
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25
°C unless otherwise specified)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Open Circuit Voltage
Ee = 1 mW/cm
2,
λ = 950 nm
Vo
350
mV
Short Circuit Current
Ee = 1 mW/cm
2,
λ = 950 nm
Ik
38
µA
Reverse Light Current
Ee = 1 mW/cm
2,
λ = 950 nm,
VR = 5 V
Ira
43
45
µA
Angle of Half Sensitivity
ϕ
± 65
deg
Wavelength of Peak Sensitivity
λ
p
950
nm
Range of Spectral Bandwidth
λ
0.5
870 to 1050
nm
Noise Equivalent Power
VR = 20 V, λ = 950 nm
NEP
4 x 10-14
W/
√ Hz
Rise Time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
100
ns
Fall Time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
100
ns
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
20
40
60
80
1
10
100
1000
100
94 8403
VR =10V
Tamb - Ambient Temperature (
°C)
0.6
0.8
1.0
1.2
1.4
94 8409
VR =5V
λ = 950 nm
Tamb - Ambient Temperature (
°C)
100
80
60
40
20
0
Figure 3. Reverse Light Current vs. Irradiance
Figure 4. Reverse Light Current vs. Reverse Voltage
0.01
0.1
1
0.1
1
10
100
1000
Ee – Irradiance ( mW/ cm2 )
10
94 8414
VR=5V
=950nm
λ
0.1
1
10
1
10
100
VR – Reverse Voltage ( V )
100
94 8415
1mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05mW/cm2
0.02mW/cm2
= 950 nm
λ


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