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MCT6H Datasheet(PDF) 2 Page - Vishay Siliconix |
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MCT6H Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page ![]() MCT6H/ MCT62H Vishay Telefunken Rev. A1, 11–Jan–99 202 Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current tp ≤ 10 ms IFSM 1.5 A Power dissipation Tamb ≤ 25°C PV 100 mW Junction temperature Tj 125 °C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V Collector current IC 50 mA Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Power dissipation Tamb ≤ 25°C PV 150 mW Junction temperature Tj 125 °C Coupler Parameter Test Conditions Symbol Value Unit AC isolation test voltage (RMS) t = 1 min VIO 1) 5 kV Total power dissipation Tamb ≤ 25°C Ptot 250 mW Ambient temperature range Tamb –40 to +100 °C Storage temperature range Tstg –55 to +125 °C Soldering temperature 2 mm from case, t ≤ 10 s Tsd 260 °C 1) Related to standard climate 23/50 DIN 50014 |