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K817P2 Datasheet(PDF) 2 Page - Vishay Siliconix |
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K817P2 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number 83522 Rev. 1.7, 26-Oct-04 K817P/ K827PH/ K847PH Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Coupler 1) Related to standard climate 23/50 DIN 50014 Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Value Unit Reverse voltage VR 6V Forward current IF 60 mA Forward surge current tp ≤ 10 µsIFSM 1.5 A Power dissipation Pdiss 100 mW Junction temperature Tj 125 °C Parameter Test condition Symbol Value Unit Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7V Collector current IC 50 mA Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Power dissipation Pdiss 150 mW Junction temperature Tj 125 °C Parameter Test condition Symbol Value Unit AC isolation test voltage (RMS) t = 1 min VISO 1) 5000 VRMS Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Soldering temperature 2 mm from case, t ≤ 10 s Tsld 260 °C Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 50 mA VF 1.25 1.6 V Junction capacitance VR = 0 V, f = 1 MHz Cj 50 pF |
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