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2SA1803 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1803 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1803 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -80 V VCE(sat) Collector-emitter saturation voltage IC=-5A;IB=-0.5 A -2.0 V VBE Base-emitter voltage IC=-3A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -5 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-3A ; VCE=-5V 35 fT Transition frequency IC=-1A ; VCE=-5V 30 MHz COB Output capacitance IE=0; VCB=-10V;f=1MHz 290 pF hFE-1 classifications R O 55-110 80-160 2 |
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