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CNY17 Datasheet(PDF) 2 Page - Vishay Siliconix |
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CNY17 Datasheet(HTML) 2 Page - Vishay Siliconix |
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www.vishay.com 2 Document Number 83606 Rev. 1.5, 26-Oct-04 CNY17 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Coupler Parameter Test condition Symbol Value Unit Reverse voltage VR 6.0 V Forward current IF 60 mA Surge current t ≤ 10 µs IFSM 2.5 A Power dissipation Pdiss 100 mW Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BVCEO 70 V Emitter-base breakdown voltage BVEBO 7.0 V Collector current IC 50 mA t < 1.0 ms IC 100 mA Power dissipation Pdiss 150 mW Parameter Test condition Symbol Value Unit Isolation test voltage (between emitter & detector referred to climate DIN 50014, part 2, Nov. 74) t = 1 sec VISO 5300 VRMS Creepage distance ≥ 7.0 mm Clearance distance ≥ 7.0 mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDE0303, part 1 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥1 011 Ω Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Soldering temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Tsld 260 °C |
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