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LND823 Datasheet(PDF) 2 Page - Linear Dimensions Semiconductor |
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LND823 Datasheet(HTML) 2 Page - Linear Dimensions Semiconductor |
2 / 4 page Symbol Parameter Max Units ID@Tc=25ºC Continuous Drain Current,VGS @ 10V 2.5 ID@Tc=100ºC Continuous Drain Current, VGS @ 10V 1.6 IDM Pulsed Drain Current(1) 8.0 A PD @Tc=25ºC Power Dissipation 50 W ID@Tc=25ºC Linear Derating Factor 0.40 W/ºC VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy(2) 210 mJ IAR Avalanche Current (1) 2.5 A EAR Repetitive Avalanche Energy (1) 5.0 mJ dv/dt Peak Diode Recovery dv/dt(3) 3.5 V/ns TJ TSTG Operating Junction and Storage temperature Range -55 to +150 Soldering Temperature, for 10 seconds 300 (1.6mm from case) ºC Symbol Parameter Min Typ Max Units RoJC Junction-to-case - - 2.5 RoCS Case-to-Sink, Flat, Greased Surface -0.50 - RoJA Junction-to-Ambint - - 62 ºC/W ABSOLUTE MAXIMUM RATING LND820/821/822/823 THERMAL RESISTANCE • Linear Dimensions, Inc. • 445 East Ohio Street, Chicago IL 60611 USA • tel 312.321.1810 • fax 312.321.1830 • www.lineardimensions.com • |
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