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BZX85B Datasheet(PDF) 1 Page - Vishay Siliconix |
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BZX85B Datasheet(HTML) 1 Page - Vishay Siliconix |
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BZX85B... Vishay Telefunken Rev. 3, 01-Apr-99 1 (5) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85607 Silicon Epitaxial Planar Z–Diodes Features D Sharp edge in reverse characteristics D Low reverse current D Low noise D Very high stability Applications Voltage stabilization 94 9369 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Power dissipation l=4mm, TL=25°C PV 1.3 W Junction temperature Tj 175 °C Storage temperature range Tstg –65...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient l=4mm, TL=constant RthJA 110 K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=200mA VF 1 V |
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