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BZX55C Datasheet(PDF) 1 Page - Vishay Siliconix |
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BZX55C Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 6 page  BZX55C... Vishay Telefunken Rev. 4, 01-Apr-99 1 (6) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85605 Silicon Epitaxial Planar Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Very high stability D Low noise D Available with tighter tolerances Applications Voltage stabilization 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Power dissipation l=4mm, TL=25°C PV 500 mW Z–current IZ PV/VZ mA Junction temperature Tj 175 °C Storage temperature range Tstg –65...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient l=4mm, TL=constant RthJA 300 K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=200mA VF 1.5 V |
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