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2SA1264N Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part No. 2SA1264N
Description  Silicon PNP Power Transistors
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Maker  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA1264N Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SA1264N Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SA1264N Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SA1264N Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SA1264N Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1264N
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ,IB=0
-120
V
VCEsat
Collector-emitter saturation voltage
IC=-6A; IB=-0.6A
-2.0
V
VBE
Base-emitter voltage
IC=-4A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-5
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
55
160
hFE-2
DC current gain
IC=-4A ; VCE=-5V
35
fT
Transition frequency
IC=-1A ; VCE=-5V
30
MHz
Cob
Output capacitance
IE=0 ; VCB=-10V ;f=1MHz
420
pF
hFE-1 Classifications
R
O
55-110
80-160
2


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