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BYW178 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BYW178 Datasheet(HTML) 1 Page - Vishay Siliconix |
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BYW178 Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 2, 24-Jun-98 1 (4) Document Number 86047 Very Fast Silicon Mesa Rectifier Features D Glass passivated junction D Hermetically sealed package D Low reverse current D Soft recovery characteristics D Very fast reverse recovery time D Low reverse recovery peak current Applications Ultra fast rectifier for switching mode power supplies 94 9588 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Reverse voltage =Repetitive peak reverse voltage VR=VRRM 800 V Peak forward surge current tp=10ms, half sinewave IFSM 80 A Repetitive peak forward current IFRM 15 A Average forward current IFAV 3 A Junction and storage temperature range Tj=Tstg –55...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction lead l=10mm, TL=constant RthJL 25 K/W Junction ambient on PC board with spacing 37.5mm RthJA 70 K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=3A VF 1.9 V Reverse current VR=VRRM IR 1 mA VR=VRRM, Tj=100°C IR 20 mA Reverse recovery current IF=1A, diF/dtx–50A/ms, VBatt=200V IRM 2.2 A Reverse recovery time IF=1A, diF/dtx–50A/ms, VBatt=200V,iR=0.25xIRM trr 50 ns Reverse recovery time (JEDEC) IF=0.5A, IR=1A, iR=0.25A trr 60 ns |
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