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2SA1217 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1217 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1217 DESCRIPTION · ·With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -3 A IB B Base current -1 A PD Total power dissipation TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ |
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