 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
2SA1217 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
||||||||||||||||||||||||||||||
2SA1217 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
|
2 / 4 page 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1217 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -40 V VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.8 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-2V -1.0 V ICBO Collector cut-off current VCB=-40V; IE=0 -0.1 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 μA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 80 240 hFE-2 DC current gain IC=-2.5A ; VCE=-2V 25 fT Transition frequency IC=-0.5A ; VCE=-2V 100 MHz COB Collector output capacitance f=1MHz ; VCB=-10V;IE=0 35 pF hFE-1 Classifications O Y 80-160 120-240 2 |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
