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2SA1217 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part No. 2SA1217
Description  Silicon PNP Power Transistors
Download  4 Pages
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Maker  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA1217 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SA1217 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SA1217 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SA1217 Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SA1217 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1217
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
-40
V
VCEsat
Collector-emitter saturation voltage
IC=-2.0A; IB=-0.2A
-0.8
V
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-2V
-1.0
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-0.1
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
80
240
hFE-2
DC current gain
IC=-2.5A ; VCE=-2V
25
fT
Transition frequency
IC=-0.5A ; VCE=-2V
100
MHz
COB
Collector output capacitance
f=1MHz ; VCB=-10V;IE=0
35
pF
hFE-1 Classifications
O
Y
80-160
120-240
2


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