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2SA969 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part No. 2SA969
Description  Silicon PNP Power Transistors
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA969 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SA969 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SA969 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SA969 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA969
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
-160
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-500mA; IB=-50mA
B
-1.5
V
VBE
Base-emitter on voltage
IC=-500mA ; VCE=-5V
-1.0
V
ICBO
Collector cut-off current
VCB=-160V ;IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
μA
hFE
DC current gain
IC=-100mA ; VCE=-5V
70
240
Cob
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
30
pF
fT
Transition frequency
IC=-100mA ; VCE=10V
100
MHz
hFE Classifications
O
Y
70-140
120-240
2


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