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2SA648 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA648 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA648 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For low frequency and large power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -7 A ICM Collector current-peak -11 A PC Collector power dissipation TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3) and symbol |
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