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BUX16 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part No. BUX16
Description  isc Silicon NPN Power Transistors
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Maker  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUX16 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUX16 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUX16 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUX16/A/B/C
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)- BUX16
= 250V(Min)- BUX16A
= 300V(Min)- BUX16B
= 350V(Min)- BUX16C
·High Power Dissipation
·Wide Area of Safe Operation
APPLICATIONS
·Designed for use in series regulators, power amplifiers,
Inverters , deflection circuits , switching regulators, and
high voltage bridge amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BUX16
250
BUX16A
325
BUX16B
375
VCBO
Collector-Base Voltage
BUX16C
425
V
BUX16
225
BUX16A
300
BUX16B
350
VCER
Collector-Emitter Voltage
RBE≤50Ω
BUX16C
400
V
BUX16
200
BUX16A
250
BUX16B
300
VCEO(SUS)
Collector-Emitter Voltage
BUX16C
350
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
IB
B
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25℃
100
W
TJ
Junction Temperature
200
Tstg
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.75
℃/W
isc Website:www.iscsemi.cn


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