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BUX16 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUX16 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX16/A/B/C DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min)- BUX16 = 250V(Min)- BUX16A = 300V(Min)- BUX16B = 350V(Min)- BUX16C ·High Power Dissipation ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in series regulators, power amplifiers, Inverters , deflection circuits , switching regulators, and high voltage bridge amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUX16 250 BUX16A 325 BUX16B 375 VCBO Collector-Base Voltage BUX16C 425 V BUX16 225 BUX16A 300 BUX16B 350 VCER Collector-Emitter Voltage RBE≤50Ω BUX16C 400 V BUX16 200 BUX16A 250 BUX16B 300 VCEO(SUS) Collector-Emitter Voltage BUX16C 350 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A IB B Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.75 ℃/W isc Website：www.iscsemi.cn |
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