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Electronic Components Datasheet Search |
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BUX16 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUX16 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX16/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUX16 200 BUX16A 250 BUX16B 300 VCEO(SUS) Collector-Emitter Sustaining Voltage BUX16C IC= 200mA ; IB= 0 350 V BUX16 225 BUX16A 300 BUX16B 350 VCER(SUS) Collector-Emitter Sustaining Voltage BUX16C IC= 200mA ; RBE≤50Ω 400 V VEBO Emitter-Base Voltage IE= 20mA ; IC= 0 6 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A B 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.125A 5.0 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 10V 3.0 V BUX16 VCE= 250V;VBE= -1.5V VCE= 250V;VBE= -1.5V;TC= 150℃ 5 8 BUX16A VCE= 325V;VBE= -1.5V VCE= 250V;VBE= -1.5V;TC= 150℃ 5 8 BUX16B VCE= 375V;VBE= -1.5V VCE= 250V;VBE= -1.5V;TC= 150℃ 2 3 ICEV Collector Cutoff Current BUX16C VCE= 425V;VBE= -1.5V VCE= 250V;VBE= -1.5V;TC= 150℃ 2 3 mA BUX16/A 5.0 IEBO Emitter Cutoff Current BUX16B/C VEB= 5V; IC=0 2.0 mA hFE-1 DC Current Gain IC= 0.4A ; VCE= 10V 15 130 BUX16/A 15 hFE-2 DC Current Gain BUX16B/C IC= 2A ; VCE= 10V 12 hFE-3 DC Current Gain IC= 4.5A ; VCE= 10V 5 COB Output Capacitance IE=0 ; VCB= 10V; ftest= 1.0MHz 150 pF fT Current-Gain—Bandwidth Product IC= 0.2A ;VCE= 10V 5 MHz isc Website:www.iscsemi.cn 2 |
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