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2SA636 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part No. 2SA636
Description  Silicon PNP Power Transistors
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA636 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  2SA636 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SA636 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SA636 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA636 2SA636A
DESCRIPTION
·With TO-202 package
·Complement to type 2SC1098/1098A
Fig.1 simplified outline (TO-202) and symbol
·High breakdown voltage
·High transition frequency
APPLICATIONS
·For audio frequency power amplifier and
low speed switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-70
V
2SA636
-45
VCEO
Collector-emitter voltage
2SA636A
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-3
A
ICM
Collector current-peak
-5
A
IB
B
Base current
-0.6
A
TC=25℃
10
PT
Total power dissipation
Ta=25℃
1.2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150


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