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BDW56 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part No. BDW56
Description  isc Silicon PNP Power Transistors
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Maker  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDW56 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
BDW56/58/60
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: VCEO(SUS)= -45V- BDW56
= -60V- BDW58
= -80V- BDW60
·Complement to Type BDW55/57/59
APPLICATIONS
·Designed for use in professional equipment such as
telecommunication and etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW56
-45
BDW58
-60
VCBO
Collector-Base
Voltage
BDW60
-100
V
BDW56
-45
BDW58
-60
VCER
Collector-Emitter
Voltage RBE= 1kΩ
BDW60
-100
V
BDW56
-45
BDW58
-60
VCEO
Collector-Emitter
Voltage
BDW60
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1
A
ICM
Collector Current-Peak
-1.5
A
PC
Collector Power Dissipation
@ TC=25℃
8
W
TJ
Junction Temperature
175
Tstg
Storage Temperature Range
-65~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
10
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
100
℃/W
isc Website:www.iscsemi.cn


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