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BDW56 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDW56 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDW56/58/60 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= -45V- BDW56 = -60V- BDW58 = -80V- BDW60 ·Complement to Type BDW55/57/59 APPLICATIONS ·Designed for use in professional equipment such as telecommunication and etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW56 -45 BDW58 -60 VCBO Collector-Base Voltage BDW60 -100 V BDW56 -45 BDW58 -60 VCER Collector-Emitter Voltage RBE= 1kΩ BDW60 -100 V BDW56 -45 BDW58 -60 VCEO Collector-Emitter Voltage BDW60 -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -1.5 A PC Collector Power Dissipation @ TC=25℃ 8 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 10 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 100 ℃/W isc Website：www.iscsemi.cn |
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