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BDW56 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part No. BDW56
Description  isc Silicon PNP Power Transistors
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Maker  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDW56 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
BDW56/58/60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDW56
-45
BDW58
-60
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDW60
IC= -10mA ;IB=0
B
-80
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -0.5A; IB= -50mA
B
-0.5
V
VBE(on)
Base-Emitter On Voltage
IC= -0.5A ; VCE= -2V
-1.0
V
ICBO
Collector Cutoff Current
VCB= VCBOmax;IE= 0
-0.1
μA
BDW56
VCB= -30V; IE=0;TJ= 150℃
-10
BDW58
VCB= -45V; IE=0;TJ= 150℃
-10
ICBO
Collector Cutoff Current
BDW60
VCB= -70V; IE=0;TJ= 150℃
-10
μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-10
μA
hFE-1
DC Current Gain
IC= -5mA ; VCE= -2V
25
hFE-2
DC Current Gain
IC= -150mA ; VCE= -2V
40
250
hFE-3
DC Current Gain
IC= -500mA ; VCE= -2V
25
fT
Current-Gain—Bandwidth Product
IC= -50mA;VCE= -5V;ftest= 35MHz
75
MHz
Switching times
td
Delay Time
30
ns
tr
Rise Time
40
ns
tstg
Storage Time
500
ns
tf
Fall Time
IC= 0.15A; IB1= -IB2= 15mA;
VCC= 10.2V
80
ns
isc Website:www.iscsemi.cn
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