MJE253 datasheet(2/2 Pages) ISC

Part #	MJE253

Description	isc Silicon PNP Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

MJE253

ELECTRICAL CHARACTERISTICS

TC =25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -10mA; IB= 0

-100

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -0.5 A ;IB= -50mA

-0.3

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -1A ;IB= -0.1A

-0.6

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -2A ;IB= -0.2A

-1.8

V

VBE(on)

Base-Emitter On Voltage

IC= -0.5A; VCE= -1V

-1.5

V

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

VCB= -100V; IE= 0;TC= 125℃

-0.1

μA

mA

IEBO

Emitter Cutoff Current

VEB= -7V; IC= 0

-0.1

μA

hFE-1

DC Current Gain

IC= -0.2 A ; VCE= -1V

40

180

hFE-2

DC Current Gain

IC= -1A ; VCE= -1V

15

fT

Current-Gain—Bandwidth Product

IC= -0.1 A; VCE= -10V; ftest = 10MHz

40

MHz

COB

Collector Capacitance

IE= 0; VCB= -10V; ftest = 0.1MHz

50

pF

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