BD933 datasheet(1/2 Pages) ISC

Part #	BD933

Description	isc Silicon NPN Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD933/935/937/939/941

DESCRIPTION

·DC Current Gain-

: hFE= 40(Min)@ IC= 150mA

·Complement to Type BD934/936/938/940/942

APPLICATIONS

·Designed for use in output stages of audio and television

amplifier circuits where high peak powers can occur.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD933

45

BD935

60

BD937

100

BD939

120

VCBO

Collector-Base Voltage

BD941

140

V

BD933

45

BD935

60

BD937

80

BD939

100

VCEO

Collector-Emitter Voltage

BD941

120

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

3

A

ICM

Collector Current-Peak

7

A

IB

B

Base Current-Continuous

0.5

A

PC

Collector Power Dissipation

@ TC=25℃

30

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

4.17

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

70

℃/W

isc Website：www.iscsemi.cn

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