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TIP29C Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TIP29C Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc Silicon NPN Power Transistors TIP29C DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat) = 0.7V(Max.)@IC= 1.0A ·Complement to Type TIP30C APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Pulse 3 A IB Base Current 0.4 A PC Collector Power Dissipation TC=25℃ 30 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W |
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