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BPV21F Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. BPV21F
Description  Silicon PIN Photodiode
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BPV21F Datasheet(HTML) 2 Page - Vishay Siliconix

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BPV21F(L)
Vishay Telefunken
2 (7)
Rev. 3, 16-Nov-99
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 81507
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward Voltage
IF = 50 mA
VF
1
1.3
V
Breakdown Voltage
IR = 100 mA, E = 0
V(BR)
60
V
Reverse Dark Current
VR = 10 V, E = 0
Iro
2
30
nA
Diode Capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
48
pF
Serial Resistance
VR = 12 V, f = 1 MHz
RS
900
W
Open Circuit Voltage
Ee = 1 mW/cm2, l = 950 nm
Vo
380
mV
Temp. Coefficient of Vo
Ee = 1 mW/cm2, l = 950 nm
TKVo
–2.6
mV/K
Short Circuit Current
Ee = 1 mW/cm2, l = 950 nm
Ik
35
mA
Reverse Light Current
Ee = 1 mW/cm2,
l = 950 nm, VR = 5 V
Ira
27
38
mA
Temp. Coefficient of Ira
Ee = 1 mW/cm2,
l = 950 nm, VR = 10 V
TKIra
0.1
%/K
Absolute Spectral Sensitivity
VR = 5 V, l = 870 nm
s(
l)
0.35
A/W
y
VR = 5 V, l = 950 nm
s(
l)
0.6
A/W
Angle of Half Sensitivity
ϕ
±65
deg
Wavelength of Peak Sensitivity
lp
950
nm
Range of Spectral Bandwidth
l0.5
870...1050
nm
Quantum Efficiency
l = 950 nm
h
90
%
Noise Equivalent Power
VR = 10 V, l = 950 nm
NEP
4x10–14
W/
√ Hz
Detectivity
VR = 10 V, l = 950 nm
D*
5x1012
cm
√Hz/
W
Rise Time
VR = 10 V, RL = 1k W,
l = 820 nm
tr
70
ns
Fall Time
VR = 10 V, RL = 1k W,
l = 820 nm
tf
70
ns
Cut–Off Frequency
VR = 12 V, RL = 1k W,
l = 870 nm
fc
4
MHz
VR = 12 V, RL = 1k W,
l = 950 nm
fc
1
MHz


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