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2SC3355 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3355 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 6 page  INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3355 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz ·High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation @TC=25℃ 0.6 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn |
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