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2SA1065 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1065 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1065 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A ;IB=0 -150 V VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-1A -2.0 V VBE Base-emitter on voltage IC=-10A;VCE=-5V -2.5 V ICBO Collector cut-off current VCB=-70V; IE=0 -1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2 mA hFE-1 DC current gain IC=-2A ; VCE=-5V 40 280 hFE-2 DC current gain IC=-10A ; VCE=-5V 20 fT Transition frequency IC=-0.5A ; VCE=-5V 50 MHz hFE-1 Classifications R Q P O 40-80 60-120 90-180 140-280 2 |
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