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2SA1170 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1170 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1170 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ; IB=0 B -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-1A -2.5 V ICBO Collector cut-off current VCB=-200V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -100 μA hFE DC current gain IC=-8A ; VCE=-4V 20 fT Transition frequency IC=-1A ; VCE=-12V 20 MHz Switching times tr Rise time 0.6 μs tstg Storage time 0.9 μs tf Fall time IC=-10A; IB1=- IB2=-1A RL=4Ω;VCC=-40V 0.2 μs 2 |
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