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A1425A-1CQ256C Datasheet(PDF) 11 Page - Actel Corporation |
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A1425A-1CQ256C Datasheet(HTML) 11 Page - Actel Corporation |
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11 / 98 page  11 Hi R e l F P GA s P ack ag e Th er m a l Ch ar ac t e r i st i c s The device junction to case thermal characteristic is θ jc, and the junction to ambient air characteristic is θ ja. The thermal characteristics for θ ja are shown with two different air flow rates. Maximum junction temperature is 150°C. A sample calculation of the absolute maximum power dissipation allowed for a CPGA 176-pin package at military temperature is as follows: P o w e r D i ss ip a t io n Gener al P o w e r E quat i o n P = [ICCstandby + ICCactive] * VCC + IOL * VOL * N + IOH * (VCC – VOH) * M where: ICCstandby is the current flowing when no inputs or outputs are changing. ICCactive is the current flowing due to CMOS switching. IOL, IOH are TTL sink/source currents. VOL, VOH are TTL level output voltages. N equals the number of outputs driving TTL loads to VOL. M equals the number of outputs driving TTL loads to VOH. Accurate values for N and M are difficult to determine because they depend on the family type, on the design, and on the system I/O. The power can be divided into two components—static and active. S tat i c P o w e r Co m ponen t Actel FPGAs have small static power components that result in power dissipation lower than that of PALs or PLDs. By integrating multiple PALs or PLDs into one FPGA, an even greater reduction in board-level power dissipation can be achieved. The power due to standby current is typically a small component of the overall power. Standby power is calculated below for commercial, worst-case conditions. The static power dissipated by TTL loads depends on the number of outputs driving high or low and the DC load current. Again, this value is typically small. For instance, a 32-bit bus sinking 4 mA at 0.33V will generate 42 mW with all outputs driving low, and 140 mW with all outputs driving high. Ac ti v e P ower Com p o nent Power dissipation in CMOS devices is usually dominated by the active (dynamic) power dissipation. This component is frequency dependent, a function of the logic and the external I/O. Active power dissipation results from charging internal chip capacitances of the interconnect, unprogrammed antifuses, module inputs, and module outputs, plus external capacitance due to PC board traces and load device inputs. An additional component of the active power dissipation is the totempole current in CMOS transistor pairs. The net effect can be associated with an equivalent capacitance that Package Type Pin Count θ jc θ ja Still Air θ ja 300 ft/min Units Ceramic Pin Grid Array 84 132 133 176 207 257 6.0 4.8 4.8 4.6 3.5 2.8 33 25 25 23 21 15 20 16 15 12 10 8 °C/W °C/W °C/W °C/W °C/W °C/W Ceramic Quad Flat Pack 84 132 172 196 256 7.8 7.2 6.8 6.4 6.2 40 35 25 23 20 30 25 20 15 10 °C/W °C/W °C/W °C/W °C/W Max. junction temp. (°C) – Max. military temp. θ ja (°C/W) ------------------------------------------------------------------------------------------------------------------ 150°C – 125°C 23°C/W ------------------------------------ 1.1 W == Family ICC VCC Power ACT 3 2 mA 5.25V 10.5 mW 1200XL/3200DX 2 mA 5.25V 10.5 mW ACT 2 2 mA 5.25V 10.5 mW ACT 1 3 mA 5.25V 15.8 mW |
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