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BF996S Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. BF996S
Description  N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BF996S Datasheet(HTML) 4 Page - Vishay Siliconix

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BF996S
Vishay Telefunken
www.vishay.de
• FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
4 (8)
Document Number 85010
Typical Characteristics (Tamb = 25_C unless otherwise specified)
0
50
100
150
200
250
300
0
20
40
60
80
100 120 140 160
Tamb – Ambient Temperature ( °C )
96 12159
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
4
8
12
16
20
24
28
32
02468
10
12
14
16
VDS – Drain Source Voltage ( V )
12849
VG1S= –1V
1V
0
2V
0.5V
VG2S=4V
Ptot=200mW
–0.5V
1.5V
Figure 2. Drain Current vs. Drain Source Voltage
0
2
4
6
8
10
12
14
16
18
20
22
–1
–0.5
0.0
0.5
1.0
1.5
VG1S – Gate 1 Source Voltage ( V )
12851
VG2S= –1V
5V 4V
0
2V
1V
3V
VDS= 15V
6V
0.5V
Figure 3. Drain Current vs. Gate 1 Source Voltage
0
2
4
6
8
10
12
14
16
18
20
22
–1
–0.5
0.0
0.5
1.0
1.5
VG2S – Gate 2 Source Voltage ( V )
12852
VG1S= –1V
0
2V
1V
3V
VDS= 15V
5V
4V
Figure 4. Drain Current vs. Gate 2 Source Voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
–1
–0.5
0.0
0.5
1.0
1.5
ID – Drain Current ( mA )
12853
VDS=15V
VG2S=4V
f=1MHz
Figure 5. Gate 1 Input Capacitance vs. Drain Current
0
0.5
1.0
1.5
2.0
2.5
3.0
–2
–1
01
23
45
VG2S – Gate 2 Source Voltage ( V )
12854
VDS=15V
VG1S=0
f=1MHz
Figure 6. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage


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