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BF994S Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. BF994S
Description  N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BF994S Datasheet(HTML) 2 Page - Vishay Siliconix

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BF994S
Vishay Telefunken
www.vishay.de
• FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
2 (7)
Document Number 85008
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Drain - source
breakdown voltage
ID = 10 mA, –VG1S = –VG2S = 4 V
V(BR)DS
20
V
Gate 1 - source
breakdown voltage
±IG1S = 10 mA, VG2S = VDS = 0
±V(BR)G1SS
6
20
V
Gate 2 - source
breakdown voltage
±IG2S = 10 mA, VG1S = VDS = 0
±V(BR)G2SS
20
V
Gate 1 - source
leakage current
±VG1S = 5 V, VG2S = VDS = 0
±IG1SS
50
nA
Gate 2 - source
leakage current
±VG2S = 5 V, VG1S = VDS = 0
±IG2SS
50
nA
Drain current
VDS = 15 V, VG1S = 0, VG2S = 4 V
BF994S
IDSS
4
18
mA
DS
G1S
G2S
BF994SA
IDSS
4
10.5
mA
BF994SB
IDSS
9.5
18
mA
Gate 1 - source
cut-off voltage
VDS = 15 V, VG2S = 4 V, ID = 20 mA
–VG1S(OFF)
2.5
V
Gate 2 - source
cut-off voltage
VDS = 15 V, VG1S = 0, ID = 20 mA
–VG2S(OFF)
2.0
V
Electrical AC Characteristics
VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward transadmittance
y21s
15
18.5
mS
Gate 1 input capacitance
Cissg1
2.5
3.0
pF
Gate 2 input capacitance
VG1S = 0, VG2S = 4 V
Cissg2
1.2
pF
Feedback capacitance
Crss
25
35
fF
Output capacitance
Coss
1.0
1.3
pF
Power gain
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
Gps
25
dB
AGC range
VG2S = 4 to –2 V, f = 200 MHz
DGps
50
dB
Noise figure
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
F
1.0
dB


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