BF994S datasheet(2/7 Pages) VISHAY | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Part #	BF994S

Description	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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Manufacturer	VISHAY [Vishay Siliconix]

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2 / 7 page

BF994S

Vishay Telefunken

www.vishay.de

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Rev. 3, 20-Jan-99

2 (7)

Document Number 85008

Electrical DC Characteristics

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Drain - source

breakdown voltage

ID = 10 mA, –VG1S = –VG2S = 4 V

V(BR)DS

20

V

Gate 1 - source

breakdown voltage

±IG1S = 10 mA, VG2S = VDS = 0

±V(BR)G1SS

6

20

V

Gate 2 - source

breakdown voltage

±IG2S = 10 mA, VG1S = VDS = 0

±V(BR)G2SS

20

V

Gate 1 - source

leakage current

±VG1S = 5 V, VG2S = VDS = 0

±IG1SS

50

nA

Gate 2 - source

leakage current

±VG2S = 5 V, VG1S = VDS = 0

±IG2SS

50

nA

Drain current

VDS = 15 V, VG1S = 0, VG2S = 4 V

BF994S

IDSS

4

18

mA

DS

G1S

G2S

BF994SA

IDSS

4

10.5

mA

BF994SB

IDSS

9.5

18

mA

Gate 1 - source

cut-off voltage

VDS = 15 V, VG2S = 4 V, ID = 20 mA

–VG1S(OFF)

2.5

V

Gate 2 - source

cut-off voltage

VDS = 15 V, VG1S = 0, ID = 20 mA

–VG2S(OFF)

2.0

V

Electrical AC Characteristics

VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Forward transadmittance

y21s

15

18.5

mS

Gate 1 input capacitance

Cissg1

2.5

3.0

pF

Gate 2 input capacitance

VG1S = 0, VG2S = 4 V

Cissg2

1.2

pF

Feedback capacitance

Crss

25

35

fF

Output capacitance

Coss

1.0

1.3

pF

Power gain

GS = 2 mS, GL = 0.5 mS, f = 200 MHz

Gps

25

dB

AGC range

VG2S = 4 to –2 V, f = 200 MHz

DGps

50

dB

Noise figure

GS = 2 mS, GL = 0.5 mS, f = 200 MHz

F

1.0

dB

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BF994S Datasheet(PDF) 2 Page - Vishay Siliconix

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