BF994S datasheet(1/7 Pages) VISHAY | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Part #	BF994S

Description	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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Manufacturer	VISHAY [Vishay Siliconix]

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BF994S

Vishay Telefunken

www.vishay.de

• FaxBack +1-408-970-5600

Rev. 3, 20-Jan-99

1 (7)

Document Number 85008

N–Channel Dual Gate MOS-Fieldeffect Tetrode,

Depletion Mode

Electrostatic sensitive device.

Observe precautions for handling.

Applications

Input- and mixer stages especially VHF TV-tuners.

Features

D Integrated gate protection diodes

D High cross modulation performance

D Low noise figure

D High AGC-range

D Low feedback capacitance

D Low input capacitance

13 579

21

4

3

94 9279

BF994 Marking: MG

Plastic case (SOT 143)

1=Source, 2=Drain, 3=Gate 2, 4=Gate 1

G

2

G

1

D

S

12623

Absolute Maximum Ratings

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Type

Symbol

Value

Unit

Drain - source voltage

VDS

20

V

Drain current

ID

30

mA

Gate 1/Gate 2 - source peak current

±IG1/G2SM

10

mA

Total power dissipation

Tamb ≤ 60 °C

Ptot

200

mW

Channel temperature

TCh

150

°C

Storage temperature range

Tstg

–55 to +150

°C

Maximum Thermal Resistance

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Channel ambient

on glass fibre printed board (25 x 20 x 1.5) mm3

plated with 35

mm Cu

RthChA

450

K/W

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	BF961	160Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.5, 25-Nov-04
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