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BF966S Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. BF966S
Description  N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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BF966S Datasheet(HTML) 1 Page - Vishay Siliconix

   
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BF966S
Vishay Telefunken
www.vishay.de
• FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (8)
Document Number 85004
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially UHF-tuners.
Features
D Integrated gate protection diodes
D High cross modulation performance
D Low noise figure
D High AGC-range
D Low feedback capacitance
D Low input capacitance
1
4
3
2
94 9307
96 12647
BF966S Marking: BF966S
Plastic case (TO 50)
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
G
2
G
1
D
S
12623
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Value
Unit
Drain - source voltage
VDS
20
V
Drain current
ID
30
mA
Gate 1/Gate 2 - source peak current
±IG1/G2SM
10
mA
Total power dissipation
Tamb ≤ 60 °C
Ptot
200
mW
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
–55 to +150
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient
on glass fibre printed board (40 x 25 x 1.5) mm3
plated with 35
mm Cu
RthChA
450
K/W


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