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BF964S Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. BF964S
Description  N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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BF964S Datasheet(HTML) 3 Page - Vishay Siliconix

   
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BF964S
Vishay Telefunken
www.vishay.de
• FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (8)
Document Number 85003
Typical Characteristics (Tamb = 25_C unless otherwise specified)
0
50
100
150
200
250
300
0
20
40
60
80
100 120 140 160
Tamb – Ambient Temperature ( °C )
96 12159
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
4
8
12
16
20
24
28
32
36
02468
10
12
14
16
VDS – Drain Source Voltage ( V )
12762
VG1S=2V
1.5V
1V
0V
–0.5V
–1V
0.5V
VG2S=4V
Figure 2. Drain Current vs. Drain Source Voltage
0
10
20
30
40
50
60
70
80
90
100
–1
01234
5
VG1S – Gate 1 Source Voltage ( V )
12763
VG2S=6V
5V
4V
0V
2V
1V
3V
VDS= 15V
–1V
Figure 3. Drain Current vs. Gate 1 Source Voltage
0
10
20
30
40
50
60
70
80
–1
01234
5
VG2S – Gate 2 Source Voltage ( V )
12764
0V
2V
1V
3V
VDS= 15V
–1V
VG1S=4V
Figure 4. Drain Current vs. Gate 2 Source Voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
3
6
9
12 15 18 21 24 27 30
ID – Drain Current ( mA )
12765
VDS=15V
VG2S=4V
f=1MHz
Figure 5. Gate 1 Input Capacitance vs. Drain Current
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0
2
4
6
8
1012 141618 20
VDS – Drain Source Voltage ( V )
12766
VG2S=4V
ID=10mA
f=1MHz
Figure 6. Output Capacitance vs. Drain Source Voltage


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