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2SK3116 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK3116 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type MOSFET 1 www.kexin.com.cn 1.27+0.1 -0.1 1.27+0.1 -0.1 5.08+0.1 -0.1 0.1max 2.54+0.2 -0.2 2.54 4.57+0.2 -0.2 0.4+0.2 -0.2 0.81+0.1 -0.1 TO-263 Unit: mm 1Gate 2Drain 3 Source MOS Field Effect Transistor 2SK3116 Features Low gate charge QG = 26 nC TYP. (ID =7.5 A, VDD = 450 V, VGS =10V) Gate voltage rating 30 V Low on-state resistance RDS(on) =1.2 MAX. (VGS =10V, ID =3.75A) Avalanche capability ratings Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=600V,VGS=0 100 A Gate leakage current IGSS VGS= 30V,VDS=0 100 A Gate to source cut off voltage VGS(off) VDS=10V,ID=1mA 2.5 3.5 V Forward transfer admittance Yfs VDS=10V,ID=3.75A 2.0 S Drain to source on-state resistance RDS(on) VGS=10V,ID=3.75A 0.9 1.2 Input capacitance Ciss 1100 pF Output capacitance Coss 200 pF Reverse transfer capacitance Crss 20 pF Turn-on delay time ton 18 ns Rise time tr 15 ns Turn-off delay time toff 50 ns Fall time tf 15 ns VDS=10V,VGS=0,f=1MHZ ID=3.75A,VGS(on)=10V,VDD=150V,RG=1 0 ,RL=50 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V ID 7.5 A Idp * 30 A Power dissipation TA=25 1.5 TC=25 70 Channel temperature Tch 150 Storage temperature Tstg -55to+150 *PW 10 s,Duty Cycle 1% Drain current PD W |
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