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2SK3386 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK3386 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type IC www.kexin.com.cn 1 MOSFET SMD Type 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 0.127 max TO-252 Unit: mm 1Gate 2Drain 3Source MOS Field Effect Transistor 2SK3386 Features Low on-resistance RDS(on)1 =21m MAX. (VGS =10V, ID = 17A) RDS(on)2 =36m MAX. (VGS =4.0 V, ID = 17A) Low Ciss :Ciss = 2100 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V ID 30 A Idp * 100 A Power dissipation TC=25 36 TA=25 1.0 Channel temperature Tch 150 Storage temperature Tstg -55to+150 *PW 10 s,Duty Cycle 1% Drain current PD W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=60V,VGS=0 10 A Gate leakage current IGSS VGS= 20V,VDS=0 10 A Gat cutoff voltage VGS(off) VDS=10V,ID=1mA 1.5 2.0 2.5 V Forward transfer admittance Yfs VDS=10V,ID=17A 10 19 S RDS(on)1 VGS=10V,ID=17A 17 21 m RDS(on)2 VGS=4.0V,ID=17A 25 36 m Input capacitance Ciss 2100 pF Output capacitance Coss 340 pF Reverse transfer capacitance Crss 170 pF Turn-on delay time ton 32 ns Rise time tr 310 ns Turn-off delay time toff 98 ns Fall time tf 100 ns Total Gate Charge QG 39 nC Gate to Source Charge QGS 7.0 nC Gate to Drain Charge QGD 12 nC VDS=10V,VGS=0,f=1MHZ ID=17A,VGS(on)=10V,RG=10 ,VDD=30V Draintosourceon-stateresistance ID =34A, VDD =48V, VGS =10V |
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