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BAV300 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. BAV300
Description  Silicon Epitaxial Planar Diodes
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BAV300 Datasheet(HTML) 2 Page - Vishay Siliconix

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BAV300...BAV303
Vishay Telefunken
Rev. 3, 01-Apr-99
2 (5)
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 85545
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
IF=100mA
VF
1
V
Reverse current
VR=50V
BAV300
IR
100
nA
VR=100V
BAV301
IR
100
nA
VR=150V
BAV302
IR
100
nA
VR=200V
BAV303
IR
100
nA
Tj=100°C, VR= 50V
BAV300
IR
15
mA
Tj=100°C, VR= 100V
BAV301
IR
15
mA
Tj=100°C, VR= 150V
BAV302
IR
15
mA
Tj=100°C, VR= 200V
BAV303
IR
15
mA
Breakdown voltage
IR=100mA, tp/T=0.01,
BAV300
V(BR)
60
V
g
R
m
tp=0.3ms
BAV301
V(BR)
120
V
BAV302
V(BR)
200
V
BAV303
V(BR)
250
V
Diode capacitance
VR=0, f=1MHz
CD
1.5
pF
Differential forward resistance
IF=10mA
rf
5
W
Reverse recovery time
IF=IR=30mA, iR=3mA,
RL=100W
trr
50
ns
Characteristics (Tj = 25_C unless otherwise specified)
0
40
80
120
160
0.01
0.1
1
10
1000
Tj – Junction Temperature ( °C )
200
94 9084
100
Scattering Limit
VR =VRRM
Figure 1. Reverse Current vs. Junction Temperature
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
VF – Forward Voltage ( V )
2.0
94 9085
Scattering Limit
Tj =25°C
Figure 2. Forward Current vs. Forward Voltage


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