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BAS386 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. BAS386
Description  Small Signal Schottky Diode
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BAS386 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 85505
Rev. 1.9, 07-Mar-06
BAS386
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 0.1 mA
VF
300
mV
IF = 1 mA
VF
380
mV
IF = 10 mA
VF
450
mV
IF = 30 mA
VF
600
mV
IF = 100 mA
VF
900
mV
Reverse current
VR = 40 V
IR
5µA
Diode capacitance
VR = 1 V, f = 1 MHz
CD
8pF
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 2. Reverse Current vs. Junction Temperature
15827
0
50
100
150
200
250
300
350
400
450
500
25
50
75
100
125
150
Tj -Junction Temperature (°C)
- Limit
at 100 % V
PR
R
- Limit
at 80 % V
PR
R
RthJA = 540 K/W
VR =50 V
1
10
100
1000
10000
25
50
75
100
125
150
15828
Tj -Junction Temperature (°C)
VR = VRRM
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Diode Capacitance vs. Reverse Voltage
15829
0
0.5
1.0
1.5
0.1
1
10
100
1000
VF - Forward Voltage (V)
Tj = 25 °C
Tj = 150 °C
15830
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
f=1MHz
VR -Reverse Voltage (V)


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