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KAV103 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KAV103 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type Diodes 1 2.64REF 0.50 0.35 3.60 3.30 1.50 1.30 LL-34 Unit: mm www.kexin.com.cn Features Silicon Epitaxial Planar Diodes For general purpose Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Working Inverse Voltage Wiv 200 V Average Rectified Current IO 200 mA DC Forward Current IF 500 mA Recurrent Peak Forward Current if 600 mA Peak Forward Surge Current Pulse Width = 1.0 second 1 Pulse Width = 1.0 microsecond 4 Total Power Dissipation at TA = 25 500 mW Linear Derating Factor from TA = 25 3.33 mW/ Thermal Resistance Junction-to-Ambient R JA 350 /W Operating Junction Temperature TJ -65to+200 Storage Temperature Tstg -65to+200 PD A iF(surge) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Breakdown Voltage BV IR = 100 uA 250 V VR = 200 V 100 nA VR = 200 V TA = 150 100 uA IF = 100 mA 1.00 V IF = 200 mA 1.25 V Capacitance CT VR = 0.0 V,f = 1.0 MHz 5.0 pF Reverse Recovery Time TRR IF=IR =30 mA ,IRR= 1.0 mA,RL = 100 50 ns IR Reverse Leakage VF Forward Voltage High Voltage,General Purpose Diode KAV103(BAV103 |
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