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4N25V Datasheet(PDF) 3 Page - Vishay Siliconix |
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4N25V Datasheet(HTML) 3 Page - Vishay Siliconix |
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4N25(G)V/ 4N35(G)V Series Vishay Telefunken Rev. A4, 11–Jan–99 88 Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage IF = 50 mA Tamb = 100°C VF 1.2 1.4 V Junction capacitance VR = 0, f = 1 MHz Cj 50 pF Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage IC = 1 mA VCEO 32 V Emitter collector voltage IE = 100 mA VECO 7 V Collector emitter cut-off current VCE = 10 V, IF = 0, Tamb = 100°C ICEO 50 nA VCE = 30 V, IF = 0, Tamb = 100°C ICEO 500 mA Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter saturation voltage IF = 50 mA, IC = 2 mA VCEsat 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 W fc 110 kHz Coupling capacitance f = 1 MHz Ck 1 pF Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit IC/IF VCE = 10 V, IF = 10 mA 4N25(G)V CTR 0.20 1 C F CE F 4N35(G)V CTR 1.00 1.5 VCE = 10 V, IF = 10 mA, Tamb = 100°C 4N35(G)V CTR 0.40 |
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