BCX69-10 datasheet(2/2 Pages) KEXIN

Part #	BCX69-10

Description	PNP Silicon AF Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

Transistors

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Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-emitter breakdown voltage

V(BR)CEO

IC =30mA, IB =0

20

V

Collector-base breakdown voltage

V(BR)CBO

IC =10ìA, IB =0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE =1ìA, IC =0

5

V

VCB =25V, IE = 0

100

nA

VCB =25V, IE =0, TA = 150

100

ìA

DC current gain *

hFE

IC =5mA, VCE =10V

50

BCX69

85

375

DC current gain *

BCX69-10

85

100

160

BCX69-16

100

160

250

BCX69-25

160

250

375

DC current gain *

hFE

IC =1A, VCE =1V

60

Collector-emitter saturation voltage *

VCE(sat)

IC =1A, IB = 100 mA

0.5

Base-emitter voltage

*

VBE(ON)

IC =5mA, VCE =10V

0.6

IC =1A, VCE =1V

1

Transition frequency

fT

IC = 100 mA, VCE = 5 V, f = 20 MHz

100

MHz

* Pulse test: t

300ìs, D = 2%.

V

ICBO

Collector cutoff current

hFE

IC = 500 mA, VCE =1V

BCX69

hFE Classification

TYPE

BCX69

BCX69-10

BCX69-16

BCX69-25

Marking

CE

CF

CG

CH

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BCX69-10 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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