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1N4678 Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. 1N4678
Description  Silicon Epitaxial Planar Z-Diodes
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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1N4678 Datasheet(HTML) 3 Page - Vishay Siliconix

   
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1N4678...1N4717
Vishay Telefunken
Rev. 2, 01-Apr-99
3 (6)
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 85586
1.) Toleranzing and voltage designation (VZ).
The type numbers shown have a standard tolerance of
± 5% on the nominal zener voltage.
2.) Maximum zener current ratings (IZM).
Maximum zener current ratings are based on maximum zener voltage of the individual units.
3.) Reverse leakage current (IR).
Reverse leakage currents are guaranteed and measured at VR as shown on the table.
4.) Maximum voltage change (
DVZ).
Voltage change is equal to the difference between VZ at 100mA and VZ at 10mA.
Characteristics (Tj = 25_C unless otherwise specified)
0
40
80
120
160
0
100
300
400
500
600
Tamb – Ambient Temperature ( °C )
200
95 9602
200
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
5
10
15
20
1
10
100
1000
VZ – Z-Voltage ( V )
25
95 9598
IZ=5mA
Tj =25°C
Figure 2. Typical Change of Working Voltage
under Operating Conditions at Tamb=25°C
–60
0
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
Tj – Junction Temperature ( °C )
240
95 9599
VZtn=VZt/VZ(25°C)
TKVZ=10 10–4/K
8
10–4/K
–4
10–4/K
6
10–4/K
4
10–4/K
2
10–4/K
–2
10–4/K
0
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
010
20
30
–5
0
5
10
15
VZ – Z-Voltage ( V )
50
95 9600
40
IZ=5mA
Figure 4. Temperature Coefficient of Vz vs.
Z–Voltage


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