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CT20TM-8 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CT20TM-8 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 2 page Feb.1999 RECOMMEND CONDITION VCM = 330V IP = 120A CM = 700 µF VGE = 28V MAXIMUM CONDITION 360V 130A 800 µF IXe Vtrig VCE RG VG IGBT CM + VCM Vtrig VG Ixe 50 40 30 10 200 160 120 80 40 0 020 < TC = 50°C < TC = 70°C CM = 800 µF 2000 1600 1200 800 400 0 160 140 120 80 60 100 VCM = 350V < TC = 70°C VGE = 28V > – MAXIMUM PULSE COLLECTOR CURRENT PULSE COLLECTOR CURRENT ICP (A) MAXIMUM PULSE COLLECTOR CURRENT GATE-EMITTER VOLTAGE VGE (V) VOLTAGE TRIGGER SIGNAL Xe TUBE CURRENT IGBT GATE MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20TM-8 STROBE FLASHER USE PERFORMANCE CURVES APPLICATION EXAMPLE Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 1A. (In general, it is satisfied if RG ≥ 30Ω) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe ≤ 130A : full luminescence condition) of main condenser (CM=800µF). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total operation hours must be applied within 5,000 hours. Figure 1 Figure 2 |
Similar Part No. - CT20TM-8 |
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Similar Description - CT20TM-8 |
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