DG200A

Siliconix

S-52880—Rev. B, 28-Apr-97

3

Test Conditions

Unless Otherwise Specified

V15 V V

15 V

A Suffix

–55 to 125

_C

B, C Suffix

Parameter

Symbol

V+ = 15 V, V– = –15 V

Unit

Analog Switch

Full

–15

15

–15

15

V

Drain-Source

On-Resistance

Room

Full

45

70

100

80

100

W

Source Off

Leakage Current

Room

Full

"0.01

–2

–100

2

100

–5

–100

5

100

Drain Off

Leakage Current

Room

Full

"0.01

–2

–100

2

100

–5

–100

5

100

nA

Channel On

Room

Full

"0.1

–2

–200

2

200

–5

–200

5

200

Digital Control

Input Current with

IV l

Hi h

Room

Full

0.0009

–0.5

–1

–1

–10

p

Input Voltage High

Room

Full

0.005

0.5

1

1

10

mA

Input Current with

Input Voltage Low

Room

Full

–0.0015

–0.5

–1

–1

–10

Dynamic Characteristics

Turn-On Time

See Switching Time Test Circuit

Room

440

1000

1000

ns

Turn-Off Time

See Switching Time Test Circuit

Room

340

425

425

ns

Charge Injection

Q

Room

–10

pC

Source-Off Capacitance

f = 140 kHz

V5 V

Room

9

Drain-Off Capacitance

Room

9

pF

Channel-On Capacitance

Room

25

pF

Off Isolation

OIRR

Room

75

Crosstalk

(Channel-to-Channel)

Room

90

dB

Power Supplies

Positive Supply Current

I+

Both Channels On or Off

V0 V

d 2 4 V

Room

0.8

2

2

mA

Negative Supply Current

I–

Room

–0.23

–1

–1

mA

Notes:

a.

Refer to PROCESS OPTION FLOWCHART.

b.

Room = 25

_C, Full = as determined by the operating temperature suffix.

c.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

d.

The algebraic convention whereby the most negative value is aminimum and the most positive a maximum, is used in this data sheet.

e.

Guaranteed by design, not subject to production test.

f.