2SJ605 datasheet(2/2 Pages) KEXIN

Part #	2SJ605

Description	MOS Field Effect Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

IC

SMD Type

Transistors

2SJ605

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain Cut-off Current

IDSS

VDS =-60 V, VGS =0V

-10

A

Gate Leakage Current

IGSS

VGS =

20 V, VDS =0V

10

A

Gate Cut-off Voltage

VGS(off)

VDS =-10 V, ID = -1 mA

-1.5

-2.0

-2.5

V

Forward Transfer Admittance

Yfs

VDS =-10 V, ID =-33 A

30

59

S

RDS(on)1 VGS =-10 V, ID =-33 A

17

20

m

RDS(on)2 VGS =-4.0V, ID =-33 A

22

31

m

Input Capacitance

Ciss

VDS = -10 V

4600

pF

Output Capacitance

Coss

VGS = 0 V

820

pF

Feedback Capacitance

Crss

f = 1 MHz

330

pF

Turn-on Delay Time

td(on)

VDD =-30 V, ID =-33 A

15

ns

Rise Time

tr

VGS =-10 V

14

ns

Turn-off Delay Time

td(off)

RG =0

100

ns

Fall Time

tf

58

ns

Total Gate Charge

Qg

VDD=-48 V

87

nC

Gate-Source Charge

Qgs

VGS =-10 V

15

nC

Gate-Drain Charge

Qgd

ID =-65 A

22

nC

Diode Forward Voltage

VF(S-D)

IF =65A, VGS =0V

1.0

V

Reverse Recovery Time

trr

IF =65A, VGS =0V

53

ns

Reverse Recovery Charge

Qrr

di/dt = 100 A /

s

110

nC

Drain to Source On-state Resistance

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