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CNY21N Datasheet(PDF) 6 Page - TEMIC Semiconductors |
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CNY21N Datasheet(HTML) 6 Page - TEMIC Semiconductors |
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6 / 10 page 
CNY21N TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 6 (10) Insulation Rated Parameters (according to VDE 0884) Parameters Test Conditions Symbol Min. Typ. Max. Unit Partial discharge Routine test 100%, ttest = 1 s Vpd 2.8 kV Partial discharge Lot test (sample test) tTr = 10 s, ttt =60s VIOTM 8 kV test voltage (sample test) ttest = 60 s (see figure 3) Vpd 2.2 kV VIO = 500 V RIO 1012 W Insulation resistance VIO = 500 V, Tamb = 100°C RIO 1011 W Insulation resistance VIO = 500 V, Tamb = 180°C (construction test only) RIO 109 W ttest = 60 s t1, t2 = 1 to 10 s t3, t4 = 1 s VIOTM Vpd VIOWM VIORM 0 t3 t4 t1 t2 tstress = 62 s tTr =10 s t V 94 9225 Figure 3. Test pulse diagram for sample test according to DIN VDE 0884 |
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