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CNY21N Datasheet(PDF) 2 Page - TEMIC Semiconductors

Part No. CNY21N
Description  Optocoupler with Phototransistor Output
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Maker  TEMIC [TEMIC Semiconductors]
Homepage  http://www.temic.de
Logo TEMIC - TEMIC Semiconductors

CNY21N Datasheet(HTML) 2 Page - TEMIC Semiconductors

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CNY21N
TELEFUNKEN Semiconductors
Rev. A1, 11-Jun-96
2 (10)
Features
According to VDE 0884
D Rated impulse voltage (transient overvoltage)
VIOTM = 8 kV peak
D Isolation test voltage (partial discharge test voltage)
Vpd = 2.8 kV peak
D Rated isolation voltage (RMS includes DC)
VIOWM = 1000 VRMS (1450 V peak)
D Rated recurring peak voltage (repetitive)
VIORM = 1000 VRMS
D Creeping current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D Thickness through insulation > 3 mm
D Isolation materials according to UL 94
D Pollution degree 2 (DIN/VDE 0110)
D Climatic classification 55/085/21 (IEC 68 part 1)
D Further approvals: BS 415, BS 7002, SETI: IEC 950,
UL 1577: File no: E 76222
D Special construction: therefore extra low coupling
capacity of typical 0.3 pF, high Common Mode
Rejection
D Low temperature coefficient of CTR
D Current Transfer Ratio (CTR) of typical 60%
Absolute Maximum Ratings
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Reverse voltage
VR
5
V
Forward current
IF
50
mA
Forward surge current
tp ≤ 10
ms
IFSM
1.5
A
Power dissipation
Tamb ≤ 25°C
Ptot
120
mW
Junction temperature
Tj
100
°C
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
5
V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
Power dissipation
Tamb ≤ 25°C
Ptot
130
mW
Junction temperature
Tj
100
°C
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
AC isolation test voltage (RMS)
VIO
8.2
kV
Total power dissipation
Tamb ≤ 25°C
Ptot
250
mW
Ambient temperature range
Tamb
–55 to +85
°C
Storage temperature range
Tstg
–55 to +100
°C
Soldering temperature
2 mm from case t
≤ 10 s
Tsd
260
°C


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