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CNY21N Datasheet(PDF) 2 Page - TEMIC Semiconductors |
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CNY21N Datasheet(HTML) 2 Page - TEMIC Semiconductors |
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2 / 10 page  CNY21N TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 2 (10) Features According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak D Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak) D Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS D Creeping current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation > 3 mm D Isolation materials according to UL 94 D Pollution degree 2 (DIN/VDE 0110) D Climatic classification 55/085/21 (IEC 68 part 1) D Further approvals: BS 415, BS 7002, SETI: IEC 950, UL 1577: File no: E 76222 D Special construction: therefore extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection D Low temperature coefficient of CTR D Current Transfer Ratio (CTR) of typical 60% Absolute Maximum Ratings Input (Emitter) Parameters Test Conditions Symbol Value Unit Reverse voltage VR 5 V Forward current IF 50 mA Forward surge current tp ≤ 10 ms IFSM 1.5 A Power dissipation Tamb ≤ 25°C Ptot 120 mW Junction temperature Tj 100 °C Output (Detector) Parameters Test Conditions Symbol Value Unit Collector emitter voltage VCEO 32 V Emitter collector voltage VECO 5 V Collector current IC 50 mA Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Power dissipation Tamb ≤ 25°C Ptot 130 mW Junction temperature Tj 100 °C Coupler Parameters Test Conditions Symbol Value Unit AC isolation test voltage (RMS) VIO 8.2 kV Total power dissipation Tamb ≤ 25°C Ptot 250 mW Ambient temperature range Tamb –55 to +85 °C Storage temperature range Tstg –55 to +100 °C Soldering temperature 2 mm from case t ≤ 10 s Tsd 260 °C |
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